A high-performance self-powered broadband photodetector based on vertical MAPbBr3/ZnO heterojunction

High-performance self-powered broadband photodetectors are still urgent for harsh environmental detections, optical imaging equipment, and photonic-integrated devices. An easily achievable vertical heterojunction photodetector between organic-inorganic CH3NH3PbBr3 (MAPbBr3) perovskite wafers and ZnO films was designed by a low-cost drop-coating method. The as-designed photodetector device exhibited a considerable photoelectric detection capability for a green light. Specifically, the high responsivities of-0.47 A/W, the detectivity of-6.88 x 1011 Jones, the external quantum efficiencies of-110.59 %, and the fast light responses of-17.12 ms/26.27 ms were achieved. Additionally, the photodetector device showed a self-powered and broadband-response characteristic. According to the broadband response from ultraviolet to near-infrared light, it was demonstrated that the excellent wavelength selectivity of the device was derived from the narrow full width at half-maximum (FWHM) of-56.67 nm. Significantly, the photoelectric response stability of devices is also one of the important criteria for evaluating commercial applications. Surprisingly, the photocurrent of unpackaged devices exposed to air at room temperature only attenuated by-2.92 % after the cycling mea-surement of about 40 min. Based on the above results, the designed MAPbBr3/ZnO heterojunction device may provide a potentially valuable research direction for acquiring high-performance and stable photodetectors.