Resonant cavity enhanced InAs/GaAsSb SLS LEDs with a narrow spectral linewidth and a high-spectral intensity operating at 4.6 m

We investigated the design, growth, fabrication, and characterization of InAs/GaAsSb SLS resonant cavity light emitting diodes (RCLEDs) grown on InAs by molecular beam epitaxy. The structure consists of a 1 lambda-thick micro-cavity positioned between two lattice-matched AlAsSb/GaAsSb distributed Bragg reflector mirrors (DBRs). A 44-pair InAs/GaAsSb SLS active region is placed at the antinode of the electric field intensity in the center of the cavity. Electroluminescence emission spectra were recorded at room-temperature. Due to the resonant cavity effect, 400 mu m-diameter SLS RCLEDs exhibited emission spectra peaked at 4.587 mu m with a narrow spectral linewidth of 52 nm. A high-spectral intensity of >3 mW cm(-2) nm(-1) was achieved for the 400 mu m SLS RCLED using 1% duty cycle to avoid Joule heating. Furthermore, temperature dependence of the emission spectra of the RCLED showed excellent temperature stability, with a rate of 0.34 nm/K. Compared to existing mid-infrared 5-stage InAs/GaAsSb SLS ICLEDs operating at similar to 4.5 mu m, the (400 mu m-diameter) InAs/GaAsSb SLS RCLEDs exhibited 10.5x brighter spectral intensity, 14x narrower spectral linewidth, and 8x improvement in the temperature stability. Owing to these attractive features, our SLS RCLEDs could be used to develop the next generation CO gas instruments and active imaging. (c) 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).