Atomic force microscopy and ellipsometry investigations of rare earth oxide Dy 2 O 3 nano-layer processed by electron beam evaporation on n-GaAs substrate

In this paper, we show and analyse the results of morphological characterisations of Dy 2 O 3 layer deposited on an n-type GaAs substrate using atomic force microscopy (AFM). For structural measurement, the surface morphology of the elaborated layer was revealed as a nano-conical event. The global experimental ellipsometric results Ψ and Δ versus emission wavelength of the Dy 2 O 3 /n-GaAs structure have been presented and discussed. Using these results and a Matlab code in which we assumed the structure had three layers, we have calculated several linear and nonlinear optical constants of the Dy 2 O 3 thin layer. Dysprosium oxide has high optical conductivity and a noticeable increase in nonlinear optical parameters, making it a promising candidate for various applications. This is especially true in the field of optoelectronics.