Study of Degradation Mechanisms in Hydrogen-Terminated Diamond MOSFETs Under Off-State and Semi-on-State Conditions

The study of degradation mechanisms is important to improve the reliability of hydrogen-terminated (C-H) diamond metal-oxide-semiconductor field-effect transistors (MOSFETs). In this article, the trapping effects of C-H diamond MOSFET under off-state and semi-on-state conditions are studied by pulsed characterization. The results show that the on-resistance $(R_{\text{ON}})$ increase with the increased intensity of the drain quiescent bias (V DSQ ) under off-state conditions; the further increase in RON under semi-on-state conditions due to the hot-carrier effects. Furthermore, under off-state conditions, the increase in threshold voltage (V TH ) is mainly due to the reverse gate quiescent bias (V GSQ ) and the increased intensity in $V$ DSQ , which promotes the detrapping effects under the gate region. In addition, the decrease in $V_{\text{TH}}$ under semi-on-state conditions is caused by the weakness of detrapping effects and the enhancement of hot-carrier effects.