Resistive switching behavior in nonmagnetic oxides

Rapid increase in information and big-data processing demand novel paradigms of adaptive circuitry to not only overcome the fundamental limitations of CMOS scaling but to transform the electronics frontiers and enable new functionalities for in- and out-memory computing. Last decade has witnessed unmatched growth in resistive switching-based random access memory performances which have evoked ample opportunities to implement, oxide semiconductors. Having desirable capabilities namely ultrafast switching speed, power-efficient, robustness, small footprint, and large device density integration, resistive switching materials possess enormous plausibility for wide-ranging applications from medical diagnosis to control systems in cybersecurity. Here, we detail materials, underlying resistive switching mechanisms, and associated device physics for different kinds of binary metal oxide systems. We also examine the bottlenecks in achieving the full potential of oxide electronics and provide our perspective on future directions for material engineering and device optimization and integration.