CMOS Si₃N₄-plasmonic ferroelectric MZIR modulator for 112-Gbaud PAM-4 transmission in the O-band

This paper presents a simulation-based analysis on the performance of plasmonic ferroelectric Mach-Zehnder in a ring (MZIR) versus symmetric Mach-Zehnder modulators (MZMs) on Si 3 N 4 targeting O-band operation. The detailed investigation reveals the tradeoff between Au and Ag legacy noble metals providing lower modulator losses and CMOS compatible Cu featuring low cost. The numerical models also show that by opting for the MZIR layout there is a reduction in the V π x L product of 46% for Ag, 39% for Au and 30% for Cu versus MZMs. Time-domain simulations verify the successful generation of 112 Gbaud PAM-4 Signals from both MZIRs and MZMs for as low as 2 × 1.3 V pp and 5µm long plasmonic phase shifters (PSs) with MZIRs providing a ΔQ signal improvement over MZMs of 2.9, 2.4, and 1.3 for Ag, Au, and Cu metals respectively. To the best of our knowledge, this is the first theoretical demonstration of such a low-loss, low-voltage, high-speed, and CMOS compatible plasmonic modulator on Si 3 N 4 , in the O-band.