Transport evidence of second-order Dirac cones in graphene monolayer on twisted boron nitride substrate

Strong band engineering can be achieved by twisting successive layers of two-dimensional (2D) materials with a small angle, where rich physics and new applications emerge. Even though controlling the twist angle between bilayer channel materials or between the channel material and the substrate has been intensively studied, the effects of twisted bilayer substrates on the unaligned channel material are much less explored. In this work, we report the realization of second-order multi-Dirac cones with the coexistence of the main Dirac cone in a monolayer graphene (MLG) on a 1{\deg} twisted double-layer boron nitride (tBN) substrate. Transport measurement reveals the emergence of multiple metallic or insulating states around the pristine Dirac cone, featuring three pairs of prominent second-order Dirac points. From the insulating states we find that the second-order Dirac cones have gapless spectra; from the metallic states we extract displacement field tunable, electron-hole asymmetric Fermi velocities. The experimental observation of multi Dirac cones in MLG/tBN heterostructure is supported by our band structure calculations employing a periodic potential. Our results unveil the potential of "twisted-substrate" as a universal band engineering technique for 2D materials regardless of lattice matching and crystal orientation, which might pave the way for a new branch of twistronics.