Comprehensive Modeling of Switching Behavior in BEOL FeFET for Monolithic 3-D Integration

In this article, we have developed a comprehensive modeling framework to explain the switching characteristics of BEOL-compatible ferroelectric field-effect transistor (FeFET) with an amorphous IGZO channel. Our TCAD-based modeling framework, calibrated against measurement data, jointly incorporates: 1) the distributed channel; 2) a physics-based nucleation-limited switching dynamics model for multidomain ferroelectric polarization (P $_{\textbf{FE}}$ ); and 3) the domain-domain interaction. To our knowledge, this is the first demonstration of a physics-based comprehensive model of BEOL-compatible FeFET. Our model reproduces and explains the experimentally observed abrupt current jumps in the reverse and forward dc sweeps. Furthermore, our model is capable of processing arbitrary input waveforms such as quasi-dc and different kinds of pulse trains used in neuromorphic applications. This comprehensive modeling framework would enable researchers to explore the BEOL FeFET applications and guide device optimization and development.