First Demonstration of BEOL-compatible Amorphous InGaZnOx Channel Antiferroelectric (Hf0.2Zr0.8O2)-Enhanced Floating Gate Memory

For the first time, we report a BEOL-compatible amorphous Indium-Gallium-Zinc-Oxide ($\alpha$-IGZO) channel antiferroelectric-enhanced floating gate memory (AFeFGM), showcasing excellent device performance with a large memory window (MW) exceeding 3.8 V, achieved with sub-6 V and ms-level pulse write operation. Notably, it exhibits ultra-low off current $(\lt 10^{-6}\mu\mathrm{A}/\mu\mathrm{m})$, high on/off ratio $(\gt10^{6})$, and reliable operation of 10 years retention time and endurance over $10^{4}$ cycles. Leveraging the synergistic effects of an oxide semiconductor channel and AFe-induced write enhancement, $\alpha$-IGZO AFeFGM holds great promise for high-speed and low-voltage memory applications with high-density integration through a monolithic approach. In addition, the load line analysis of the devices provides valuable insights into the AFe-enhanced charge trapping and de-trapping, offering inspiring guidance for further design and optimization of AFe-involved memory devices.