The epitaxial growth of high efficiency inverted metamorphic triple junction solar cell for CPV application

In this paper, 3J-IMM solar cells were studied in comparison with 3J-LM solar cells grown by MOCVD. The structural characteristics were studied by HRXRD, HRTEM and SIMS, which showed a high crystal quality of the metamorphic sub-cell. The solar cell performance in terms of I-V curves and EQE was investigated between the different solar cells structures. The current of the IMM solar cell is almost equal to the LM ´monitor solar cell. Under AM 1.5D, 1000 suns conditions, an Isc of 14.29 A, Voc of 3.538 V, FF of 83.9 %, and an efficiency of 42.3 % were achieved for the 3J-IMM solar cell with a chip size of 1.0 cm2, which is an absolute 2.9% higher than that of a 3J-LM solar cell in conversion efficiency. The excess current contribution from the Ge bottom cell in the 3J-LM solar cells is eliminated, accompanied with a 0.3V increase in Voc for the 3J-IMM solar cells.