Antiferroelectric ceramic capacitors with high energy-storage densities and reduced sintering temperature

Field-driven transition from antiferroelectric (AFE) to ferroelectric (FE) states has gained extensive attention for microelectronics and energy storage applications. High dielectric-breakdown-strength (DBDS) for a given material is a necessity to attain full capacity of electrical energy storage. An approach to increasing energy performances is to modulate the related materials to own a higher phase transition electric field (EFE-AFE) using elemental dopants. In this case, Cd2+ was selected as the dopant at A-site in the Pb0.97La0.02Zr0.50Sn0.45Ti0.05O3 ceramics to tailor this EFE-AFE value due to the ionic difference enhanced antiferroelectricity. Surprisingly, the doped ceramics increased EFE-AFE by half, DBDS by 16 %, and maintained energy storage efficiency eta of over 85 %, providing a way to improve energy storage density. It is worth mentioning that while the performance has been improved, the sintering temperature has been reduced by 170 degrees C. At the same time, the ceramics maintain good temperature stability, extremely fast discharging speed and discharging energy storage density, indicative of a promising choice in pulse power devices.