Comparative evaluation of memristor-based compact 4T2M SRAM with different memristor models

Static Random Access Memory (SRAM) is volatile and uses latching flip-flops to store each bit. To make SRAM work as non-volatile memory (NVM), memristor-based SRAM is a feasible choice mainly due to its high-speed operation and low power consumption. In this paper, the operational characteristics of 4T2M SRAM have been studied based on three different memristor models developed by Biolek et al. (2009), Joglekar and Wolf 2009 Joglekar, Y. N., & Wolf, S. J. (2009). The elusive memristor: Properties of basic electrical circuits. European Journal of Physics, 30(4), 661–675. https://doi.org/10.1088/0143-0807/30/4/001[Crossref], [Web of Science ®] , [Google Scholar], and Prodromakis et al. (2011 Prodromakis, T., Peh, B. P., Papavassiliou, C., & Toumazou, C. (2011). A versatile memristor model with nonlinear dopant kinetics. IEEE Transactions on Electron Devices, 58(9), 3099–3105. https://doi.org/10.1109/TED.2011.2158004[Crossref], [Web of Science ®] , [Google Scholar]), and comparative performance analysis has been made to assess its adaption to NVM. These three different models are compared in terms of delay, power consumption, and static noise margin. From the simulation, it has been observed that Biolek 4T2M SRAM produces better performance in write delay calculation scoring 0.873 ns when ‘0’ is written and 0.166 ns when ‘1’ is written. This model also provided a low power consumption value compared to other models. However, ternary plot analysis finds that Prodromakis is performing in average better in all positive traits. All the simulations are done in LTSpice and the transistor uses TSMC 180 nm CMOS technology.