Optical Performance of the Double Gate Reverse T-Shaped Channel TFET in Near Visible Light Photodetector

The optical performance of the band-to-band tunneling field-effect transistor by optimizing the wavelength of light illuminated on the device’s photoresistive area and the source material of the proposed Double Gate Reverse T-shaped Channel Tunnel field-effect transistor is investigated in this work. The device analysis was simulated using the TCAD-Sentaurus tool. The optical behavior of the TFET-based sensor was explored by plotting the optical generation rate, energy band diagram, band-to-band tunneling rate, and electron density contour for different wavelengths using both Si–Ge and Ge sources. The device incorporates both a side gate and a bottom gate, where the intensity flux occurs on the side gate. Additionally, the spectral sensitivity ( S_n ) graph was generated by examining the relationship between wavelength ( λ ) and gate voltage ( V_gs ) for the photosensors under investigation and the value of ( S_n ) with Si–Ge source is calculated to be 76.87. The results indicate that the Si–Ge source photosensor exhibits higher ( S_n ) compared to the Ge source TFET photosensor and it is calculated to be 78.93 for the Si–Ge source. This enhanced S_n can be attributed to the increased tunneling rate of optically generated carriers along the channel in the Si–Ge source photosensor. To further elaborate on the device performance, various parameter graphs were analyzed. Signal noise ratio and its value measured to be 140 dB, responsitivity (R) is calculated to be 1.010 for the Si–Ge source region, and quantum efficiency (η ) is calculated to be 4.19E−05.