Area-Selective Chemical Vapor Deposition of Gold by Electron Beam Seeding

Chemical vapor deposition (CVD) is an established method for producing high-purity thin films, but it typically necessitates the pre- and post-processing using a mask to produce structures. This study presents a novel maskless patterning technique that enables area-selective CVD of gold. A focused electron beam is used to decompose the metal-organic precursor Au(acac)Me2 locally, thereby creating an autocatalytically active seed layer for subsequent CVD with the same precursor. The procedure can be included in the same CVD process without the need for clean room lithographic processing. Moreover, it operates at low temperatures of 80 degrees C, over 200 K lower than standard CVD temperatures for this precursor, reducing thermal load on the specimen. Given that electron beam seeding operates on any even moderately conductive surface, the process does not constrain device design. This is demonstrated by the example of vertical nanostructures with high aspect ratios of approximate to 40:1 and more. Written using a focused electron beam and the same precursor, these nanopillars exhibit catalytically active nuclei on their surface. Furthermore, by using the onset of the autocatalytic CVD growth, for the first time the local temperature increase caused by the writing of nanostructures with an electron beam can be precisely determined. In this work, an area-selective chemical vapor deposition of gold is demonstrated. A metal-organic precursor Au(acac)Me2 is used to create an autocatalytically active seed layer by electron beam deposition for further film growth at sub-100 degrees C temperatures. In addition, this process provides a novel method for determining local temperature increases during electron beam writing. image