Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 °C at Zero Vhold with Sub-10 ns Speed and 3-bit Operation
2022 International Electron Devices Meeting (IEDM)(2022)
摘要
The emerging capacitorless DRAM based on amorphous oxide semiconductor shows encouraging retention performance, while great challenges still exist in the need of a negative hold voltage and the low on-current with slow write speed. In this work, a BEOL-compatible capacitorless (2T0C) DRAM cell based on optimized amorphous IGZO FETs as write transistors is demonstrated, with a record high retention time and fastest write operation. optimized IGZO transistors at high positive threshold voltage (V
th
) over 1.2 V exhibit improved on-current (I
on
) of 24 $\mu$A/$\mu$m owing to the insertion of a thin In-rich ITO interlayer at source/drain area with greatly reduced contact resistance, enabling sub-ten-nanosecond speed. The high V
th
enables remarkable retention time for the 2T0C DRAM cell at zero hold voltage, capable of keeping data over a record-long 10 ks and 7 ks retention time at room temperature and 85°C, respectively. Furthermore, 3-bit memory operations with high linearity are achieved by changing the WBL voltage or WWL voltage at temperatures up to 85°C.
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关键词
2T0C DRAM cell,amorphous oxide semiconductor,BEOL-compatible capacitorless DRAM cell,capacitorless DRAM,high positive threshold voltage,high retention time recording,InGaZnO/int,negative hold voltage,optimized amorphous FET,optimized IGZO FETs,reduced contact resistance,temperature 293.0 K to 298.0 K,temperature 85.0 degC,time 10.0 ks,time 10.0 ns,time 7.0 ks,transistor optimization,word length 3 bit,write transistors,zero hold voltage
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