Top-Gate CVD WSe2 pFETs with Record-High Id ~594 μA/μm, Gm ~244 μS/μm and WSe2 /MoS2 CFET based Half-adder Circuit Using Monolithic 3D Integration
2022 International Electron Devices Meeting (IEDM)(2022)
摘要
Monolithic integration of complementary field-effect transistor (CFET) with two-dimensional (2D) materials channels has been challenging due to the deteriorated performance of p-type transistors, especially using top-gate dielectric. In this work, we demonstrate monolithic 3D stacking CFET based on chemical-vapor-deposition (CVD) grown 2D materials channels for low-power integrated circuits (ICs). The top gate p-channel bilayer WSe
2
transistor is optimized by low-temperature post-metal annealing, achieving a record-high $\text{I}_{\text{o}\text{n}}$ of -594$\mu$A/$\mu$m and $\text{G}_{\text{m}}$ of -244$\mu$S/$\mu$m at $\text{V}_{\text{d}}=-2$V with a short $\text{L}_{\text{c}\text{h}}=135$ nm, far exceeding previous results. Furthermore, full-output-swing inverters with rail-to-rail operations and below-nanowatt low power are achieved owing to the symmetrical threshold voltages for WSe
2
pFETs and MoS
2
nFETs. The 4T SRAM and 16T half-adder circuit units based on CFET design are also experimentally demonstrated for the first time, presenting the superiority of CFET in performance, power, and area (PPA).
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关键词
16T half-adder circuit units,4T SRAM,below-nanowatt low power,CFET design,chemical-vapor-deposition,complementary field-effect transistor,CVD grown 2D material channels,full-output-swing inverters,gate CVD pFETs,half-adder circuit units,low-power integrated circuits,low-temperature post-metal annealing,monolithic 3D integration,monolithic 3D stacking CFET,MoS2/int,nFETs,p-type transistors,rail-to-rail operations,size 135.0 nm,symmetrical threshold voltages,top gate p-channel bilayer transistor,top-gate dielectric,two-dimensional material channels,voltage -2.0 V,WSe2/int
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