Analysis of Source, Drain and Gate Field Plated AlGaN/GaN Based HEMT for High Breakdown Voltage

The rapidly-increasing operation frequency and power density in electrical power conversion systems require the synthesis of power electronics devices that surmount Sibased devices. AlGaN/GaN based HEMTs are remarkable in their demonstration of higher breakdown voltage, lower onstate resistance, higher switching frequencies and higher temperature capabilities (about 300 oC for GaN devices compared to 150 ^o C of Si based devices). In high power devices, however, circuit designers suffer from having to employ sluggish and insensitive FETs which have poor transconductance and subthreshold slope values. In our proposed structure, we have found a solution to this issue, proposing a structure that provides excellent high-power performance in addition to being fast and sensitive. Our device exhibits a breakdown voltage of 2449V with a subthreshold slope of 105.7 mV/decade and a transconductance of 0.014 S/$\mu$m. Hence, device parameters like drain voltage ($\nabla_{\mathrm{D}\mathrm{S}}$), gate source voltage ($\nabla_{\mathrm{G}\mathrm{S}}$), drain current ($I_{\mathrm{D}}$), transconductance ($g_{\mathrm{m}}$), threshold voltage ($\nabla_{\mathrm{t}}$) and subthreshold slope have been analyzed for the presented HEMT for high frequency and high-power application. All simulation results in this work have been performed and obtained using Silvaco TCAD Simulation tool