Design and Analysis of Integrated Optical Waveguide in Optical Interconnection on Chips

With the reduction of integrated circuit feature size, increase of signal frequency and density of layout and wiring, problems caused by electrical interconnection, such as limited bandwidth, clock skew, signal distortion and increased interference, have become bottlenecks in the realization of ultra-high speed circuits. Because light travels at the speed of light and is an electromagnetic wave of high frequency, it does not depend on the movement of particles and can travel at very high speeds. It does not depend on the motion of particles, thus avoiding the influence of parasitic parameters. So optical transmission is a good alternative to electrical transmission. Optical interconnection based on optical transmission is composed of light source, interconnection channel and optical receiver by transmitting optical signals. With the rapid development of photoelectric integration, more and more people are devoted to the research of optical waveguide in optical interconnection on chips. Integrated silicon-based optical waveguide is a very important part in silicon-based optical integrated circuit. Because silicon based optical waveguide is an important part of photoelectric integrated circuit, it is necessary to study its material, structure and the way of constructing related components, so as to obtain low-loss optical waveguide components. In this paper, two materials, SOI and SiO2, are selected to analyze the ridge and rectangular waveguides in detail, and the Y-branch power splitter and $1\times 4$ power splitter are designed with them, and the related properties are compared and discussed. The basic characteristics of these waveguides are analyzed theoretically and by simulation. Some instructive results are given for photoelectric integration in optical interconnection on chips.