La-doped BiFeO

Resistive switching devices are promising candidates for the next generation nonvolatile memories due to their outstanding performance, simplicity, and scalability. Among them, developing multilevel resistive switching has attracted great attention for its potential in significantly improving information storage density but without extra energy consumption. Although continuous multilevel resistive switching (CMRS) has been observed in many metal oxides and organic materials, achieving random access multilevel nonvolatile memories (RAMNM) with high speed and reliability is still pressingly needed for practical applications. Here, we have successfully fabricated a RAMNM based on high–performance pulse-width modulated memristive ferroelectric tunnel junctions (FTJs) of Pt/La 0.1 Bi 0.9 FeO 3 /Nb:SrTiO 3 with giant switching ratios above 4 × 10 5 at room temperature. Multilevel resistance states become indistinguishable when the modulation sequence is fuzzed in continuous multilevel resistive switching (CMRS) devices. The feasibility of random access multilevel nonvolatile memories (RAMNM) with high speed and reliability has been demonstrated in Pt/La 0.1 Bi 0.9 FeO 3 /Nb:SrTiO 3 ferroelectric tunnel junctions (FTJs). The combination of this device structure design and operation mode provides a promising route to develop high–density memristive devices. Display Omitted • Pt/La 0.1 Bi 0.9 FeO 3 /Nb:SrTiO 3 FTJs have been fabricated using microfabrication techniques. • The feasibility of RAMNM has been demonstrated in such devices with random pulse width modulation. • The structure design and operation mode provides a route to develop high–density memristive devices. • A tentative mechanism of the RAMNM is proposed.