Nanoscale Thermal Transport in Vertical Gate-All-Around Junctionless Nanowire Transistors--- Part II: Multiphysics Simulation

Today, extensive research has focused on heat propagation in emerging nanoelectronic devices. With advances in the fabrication of nanowire (NW) transistors, thermal management has become a critical issue in cooling strategies and conducting materials. In this article, we present a novel multiphysics analysis of the nanoscale thermal transport in 18-nm vertical junctionless gate-all-around (GAA) silicon NW transistors. Based on this multiphysics analysis, we developed a new computational model derived from the Guyer-Krumhansl equation (GKE) for describing heat transport within the nanoscale device. Our simulations results agree well with available theoretical approaches as well as measurement data.