Influence of trap-assisted and intrinsic Auger-Meitner recombination on efficiency droop in green InGaN/GaN LEDs

We study the impact of deep-level defects on trap-assisted Auger-Meitner recombination in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) method and deep-level optical spectroscopy (DLOS). Carrier dynamics information, including carrier lifetime, recombination rate, and carrier density, is obtained from SSEL, while DLOS is used to obtain the deep-level defect density. Through fitting the nonradiative recombination rates of wafers with different deep-level defect densities, we obtain the Shockley-Read-Hall (SRH) and trap-assisted Auger-Meitner recombination (TAAR) coefficients. We show that defect-related nonradiative recombination, including both SRH and TAAR, accounts for a relatively small fraction of the total nonradiative recombination, which is dominated by intrinsic Auger-Meitner recombination. The interplay between carrier localization and Coulomb enhancement has a different impact on radiative and intrinsic Auger-Meitner recombination. Evidence is presented that the imbalance between the change of radiative and intrinsic Auger-Meitner recombination is the primary cause of the efficiency droop at high carrier densities in the samples studied.