Nanoscale Temperature Dependent Quantum-Effect Analytical Model of Short- Channel, Junction-Less, Double-Gate Stack (SC-JL-DG) MOSFET for Analog Applications at Higher Frequencies

In this paper, an in-depth temperature study is performed on Junction-less (JL), Double-Gate, metal-oxide-semiconductor field-effect transistors (JL-DGMOSFET) with gate-oxide-stack so as to deeply analyse the heating effects on the device. Quantum-effects are also induced. The effects are studied on different parameters like surface potential, threshold voltage, gm etc. An analytical model was applied to improve the efficacy of the outcomes. By adding the Schrodinger equation to the standard 2-D Poisson's equation, the analytical model is created. The conclusive expressions for Vth (change in threshold voltage) and potential are derived by employing the boundary conditions for the device. The device's parameters line up with the outcomes of analysis and simulation. The ATLAS device simulation was instrumental in the simulation work.