A 65nm RRAM Compute-in-Memory Macro for Genome Sequencing Alignment

ESSCIRC 2023- IEEE 49th European Solid State Circuits Conference (ESSCIRC)(2023)

引用 0|浏览23
暂无评分
摘要
In genomic analysis, the major computation bottleneck is the memory-and compute-intensive DNA short reads alignment due to memory-wall challenge. This work presents the first Resistive RAM (RRAM) based Compute-in-Memory (CIM) macro design for accelerating state-of-the-art BWT based genome sequencing alignment. Our design could support all the core instructions, i.e., XNOR based match, count, and addition, required by alignment algorithm. The proposed CIM macro implemented in integration of HfO 2 RRAM and 65nm CMOS demonstrates the best energy efficiency to date with 2.07 TOPS/W and 2. 12Gsuffixes/J at 1. 0V.
更多
查看译文
关键词
RRAM, Compute-in-Memory, Genome Sequencing Alignment
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要