A Novel Mixture-Devices-Based Submodule for MMC by Using Low on-State Voltage IGCT and High di/dt Ability IGBT

At present, insulated-gate bipolar transistor (IGBT) is widely used as the converter component in the submodule of modular multilevel converter (MMC) for its excellent performance in driving circuit and switching speed, but the further application is restricted by its high conduction loss and cost rate. Integrated gate-commutated thyristor (IGCT) is another converter device used in MMC with low conduction loss and cost. However, the d i /d t capability of IGCT is limited so that a snubber circuit is required in the submodule for protection, which generates unwanted power loss for MMC. For better performance and reliability, this article proposes a mixture-devices-based submodule for MMC based on the cooperation of parallel IGCT and IGBT devices. Double-pulse switching experiments for the MS are conducted to verify its effectiveness, and to get the data for the follow-up switching power loss calculation. The power loss of MMC based on IGBT, IGCT and mixture devices are calculated based on the model established in this article. Furthermore, the comprehensive comparison for power loss among IGBT-based, IGCT-based and mixture-device-based MMCs are performed, proving the effectiveness of the mixture topology in terms of power loss reduction. Meanwhile, the proposed MS is cost-competitive.