Direct Measurement of Inverse Piezoelectric Effects in Thin Films Using Laser Doppler Vibrometry

Further miniaturization of electronic devices necessitates the introduction of new materials, including piezoelectric thin films, that exhibit electromechanical functionalities without significant degradation in response due to substrate-induced clamping. To identify material systems with superior piezoelectric properties as thin films, simplified and quantitative electromechanical characterization techniques are required. Here, single-beam, laser Doppler vibrometry is used to detect ac electric-field-induced surface displacement in the frequency range 1-100 kHz with low error (around 6% at 10 kHz) and resolution of 0.0003 nm. The technique is used to quantify both electrostriction and piezoelectric responses (surface displacement values <0.05 nm) of various thin films. Requirements for sample geometry and device structures are established and measurement accuracy and resolution are validated against measurements from the literature via synchrotron-based diffraction measurements. A general methodology to measure and extract the piezoelectric coefficients for thin-film samples using finite-element modeling is presented and applied to determine the d33 coefficient and visualize the response in substrate-clamped 50-400-nm-thick PbZr0.52Ti0.48O3 films, especially as compared to bulk versions with the same sample geometry.