Improved memory performance of ALD grown HfO2 films by nitrogen doping

Resistive switching devices have shown potential in storage class memory and artificial intelligence applications but however, it faces drastic limitations due to low endurance, bad retention, low ON/OFF ratio and variant operating voltages. Here we have reported the resistive switching characteristics of nitrogen (N)-doped HfOx films synthesized by atomic layer deposition (ALD) technique. The N-doping in hafnia films significantly en-hances the stability of devices, its ON/OFF ratio and retention thus showing its potential in storage class memory applications. The increase in memristor performance has been classified due to the formation of oxygen vacancy and nitrogen (Vo + 2 N) clusters which influence the ionic conductivity and reduces the total energy of the system thus increasing its ON/OFF ratio and device electrical stability. The Vo + 2 N clusters also scrutinize the conductive filament formation in the HfOx matrix and punch them to grow in localized directions which results in uniform distribution of SET/RESET voltages and high endurance. Overall, this study provides a facile way to improve the device performance of resistive switching devices for enhanced memory applications and neuro-morphic computing.