A 0.2 dBm 225 GHz Frequency Quadrupler with 330° Phase Control in 130 nm SiGe BiCMOS.

ISCAS(2022)

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摘要
In this research paper, a concept for a 225 GHz frequency quadrupler with phase control in local oscillator paths is investigated. By combining a 56.25 GHz phase shifter with a millimeter wave quadrupler, producing a 225GHz signal, a highly performant way of realizing phase control at up to sub-THz frequencies is studied. Locating the phase shifter in the sub 60GHz band both enhances the phase control and overall gain of the system. A phase control range of 330° is measured. With a de power consumption of 105mW, the system achieves a maximum output power of 0.16dBm and a maximum gain of 21dB outperforming the state of the art by 17dB and 25dB respectively. This results in a factor 40 and 2.5 improvement of drain and gain efficiency respectively. Additionally, the root mean square (rms) gain error is reduced to best in class value of 0.04 dB while maintaining a competitive rms phase error of 4.7°.
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关键词
BiCMOS integrated circuits, millimeter wave integrated circuits, phase shifters, SiGe
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