Hopping Mechanism of Charge Transfer in the Thin Layers of a Ge 28.5 Рb 15 S 56.5 Vitreous System

The results of the study of the charge transfer processes in the thin layers of a Ge 28.5 Рb 15 S 56.5 vitreous system are presented. The power-law dependence of the conductivity on frequency and a decrease in the value of the exponent s with increasing temperature are found. The charge transfer is a thermally activated process and two areas on the temperature dependence of conductivity are present. The activation energies of these areas are Е 1 = 0.20 ± 0.01 and Е 2 = 0.50 ± 0.01 eV, respectively. The obtained results are explained within the scope of the correlated barrier hopping (CBH) model of the hopping conductivity in disordered systems. The main microparameters of the system, namely, the density of the localized state ( N ), hopping length ( R ω ), and the maximal value of the height of the potential barrier ( W M ), are calculated.