Scalable high performance radio frequency electronics based on large domain bilayer MoS 2

Atomically-thin layered molybdenum disulfide (MoS 2 ) has attracted tremendous research attention for their potential applications in high performance DC and radio frequency electronics, especially for flexible electronics. Bilayer MoS 2 is expected to have higher electron mobility and higher density of states with higher performance compared with single layer MoS 2 . Here, we systematically investigate the synthesis of high quality bilayer MoS 2 by chemical vapor deposition on molten glass with increasing domain sizes up to 200 μm. High performance transistors with optimized high- κ dielectrics deliver ON-current of 427 μA μm −1 at 300 K and a record high ON-current of 1.52 mA μm −1 at 4.3 K. Moreover, radio frequency transistors are demonstrated with an extrinsic high cut-off frequency of 7.2 GHz and record high extrinsic maximum frequency of oscillation of 23 GHz, together with gigahertz MoS 2 mixers on flexible polyimide substrate, showing the great potential for future high performance DC and high-frequency electronics.