Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET

ALD MoN is proposed as a scalable and thermally stable p-type WFM for CFET. The early film closure and high WF of the ALD MoN make it as a promising scalable pWFM applicable to a wide-tunable multi- $\mathrm{V}_{\mathrm{t}}$ nanosheet gate stack. The high EWF of MoN pMOS is also thermally stable as compared to the reference TiN, which makes it suitable for CFET. On planar RMG pFETs, V t reduction by up to 220mV was achieved with MoN barrier compared to the TiN for the same physical thickness, without affecting long channel hole mobility and NBTI reliability.