Leakage current, electrical properties and density of states extracted using correlated barrier hopping in perovskite layered aurivillius Bi5Ti3FeO15 nanoparticles

The investigation of the functioning of electronic components is essential for the development of integrated circuits and electronic devices. High leakage current is directly related to the failure of the whole electronic system. Therefore, we account detailed ac electrical properties and leakage current characteristics of layered perovskite Bi5Ti3FeO15 nanoparticles synthesized by solid-state method. The ac electrical analysis of synthesized Bi5Ti3FeO15 nanoparticles depicted the contribution of charge polarization at the interface of electrodes. Correlated barrier hopping (CBH) conduction mechanism was observed from 300 K to 400 K. Distribution of minimum hopping distance (Rmin) and density of states (DOS) along varying frequency and temperature indicates that the hopping between pairs of sites is the primary mechanism of charge transfer in Bi5Ti3FeO15. The movement of complex modulus peaks indicates an enhancement in long-range hopping of polaron due to delocalization of polaron as temperature increases that support the non-Debye type to Debye type relaxing process. The temperature dependent dielectric behaviour of Bi5Ti3FeO15 nanoparticles shows an increase in relative permittivity (ε′) and dielectric loss tangent (tanδ) with the increase in temperature ranged 300–400 K. Conversely, an increase in frequency leads to a decrease in both parameters. Low leakage current density (of the order of 10−6 A/cm2) at both positive and negative biased electric fields specifies the stable electrical characteristics of Bi5Ti3FeO15.