Efficient Suppression of Persistent Photoconductivity in ?-Ga₂O₃-Based Photodetectors with Square Nanopore Arrays

In this work, square nanopore arrays were developed on the surface of ss-Ga2O3 microflakes using focused ion beam (FIB) etching, and solar-blind photodetectors (PDs) were fabricated based on the ss-Ga2O3 microflakes with square nanopore arrays. The ss-Ga2O3 microflake-based device was transformed from a gate voltage depletion mode to an oxygen depletion mode by FIB etching. The developed device exhibited excellent solar-blind PD performance with extremely high responsivity (1.8 x 10(5) at 10 V), detectivity (3.4 x 10(18) Jones at 10 V), and light-to-dark ratio (9.3 x 10(8) at 5 V) as well as good repeatability and excellent stability. The intrinsic mechanism responsible for this performance was then systematically discussed. This work opens up a new avenue for the fabrication of high-performance ss-Ga2O3-based low-dimensional PDs with high reproducibility by employing the FIB etching process.