Towards low-temperature processing of lead-free BZT thin films for high-temperature energy storage performance

In this work, lead-free BaZr0.35Ti0.65O3 (BZT) thin films were grown on silicon by using pulsed laser de-position. The phase structures of the BZT thin films were controlled via the deposition temperature, and their effects on the breakdown strength and energy-storage performance were systematically investigated. Our results indicate that the BZT thin films deposited at a low temperature of 450 degrees C have a paraelectric phase and display the highest recoverable energy density of 121.2 J/cm3 and a medium energy efficiency of 88.2%. The ultrahigh energy storage achieved is mainly due to the remarkable improvement in the break-down strength and the slimmer and slanted polarization hysteresis loop. Moreover, the BZT thin films demonstrate excellent thermal stability across a wide temperature measurement range (25-200 degrees C) and a superior fatigue endurance of up to 1010 switching cycles even under a high temperature measurement of 200 degrees C. This work provides a simple and effective way of improving the energy storage properties and stable performance of dielectric thin films for application in harsh environments.(c) 2023 Elsevier B.V. All rights reserved.