The coupled effects of grain boundary strengthening and Orowan strengthening examined by dislocation dynamics simulations

COMPUTATIONAL MATERIALS SCIENCE(2024)

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摘要
DD simulations are performed to unravel the coupled effects between grain boundary strengthening and Orowan strengthening. With the simulations of a plastically-deformed grain embedded in elastic matrix, the internal stresses associated with inter-and intragranular obstacles are quantified. First, plastic yielding is controlled by the length of dislocation sources. Then, in plastic deformation, the stress contribution of bypassing mechanism increases significantly with the size and number of precipitates, while the stress contribution of geometrically necessary dislocations at grain boundaries slightly decreases. Compared with regular spatial dis-tribution of precipitates, random distribution induces a higher strengthening effect by reducing the dislocation mobility. Simulations of four-grain aggregates involving grain refinement and precipitation are systematically investigated. The volume fraction of precipitates is the key factor controlling the Orowan strengthening in addition to the grain size effect. A generalized Hall-Petch equation based on the mean free path of dislocations is proposed. At low strain, a relatively uniform internal stress field is found inside the aggregates with weak stress concentrations around grain boundaries and precipitates. The underlying mechanisms identified in this work are essential for understanding the plastic behavior of precipitate-strengthened polycrystals.
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关键词
Dislocation dynamics,Orowan strengthening,Hall-Petch effect,Crystal plasticity
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