A Dual-Mode ReRAM CIM Macro for Low Power Memory-Augmented Neural Networks

2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)(2022)

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摘要
Learning from a few unseen samples to generalize the feature of new classes is a key challenge for real-time machine intelligence. To resolve this issue, the memory-augmented neural network (MANN) is proposed with an external memory to make use of the learned knowledge patterns to adapt to the new data [1]. A ReRAM computing-in-memory (CIM) macro based on voltage division is proposed to support the MANN operations in this paper. With the same bit-cell but different encoding schemes, the proposed macro is able to realize two different computing paradigms. The proposed complementary structure of bit-cell shows a high energy efficiency in the compute phase. And the simulation result shows that the proposed bit-cell has a good tolerance of device variations as well.
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关键词
bit-cell,compute phase,dual-mode ReRAM CIM macro,encoding schemes,energy efficiency,external memory,knowledge patterns,low power memory-augmented neural networks,MANN operations,real-time machine intelligence,ReRAM computing-in-memory macro,voltage division
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