Benefits of Design Assist Techniques on Performances and Reliability of a RRAM Macro

B. Giraud, S. Ricavy, Y. Moursy, C. Laffond, I. Sever, V. Gherman, M. Pezzin, F. Lepin, M. Diallo, K. Zenati, S. Dumas, M. Vershkov, A. Bricalli, G. Piccolboni, J.-P. Noel, A. Samir, G. Pillonnet, Y. Thonnart,G. Molas

2023 IEEE International Memory Workshop (IMW)(2023)

引用 1|浏览1
暂无评分
摘要
This paper presents different design assist techniques and demonstrates their impact on enhancing the intrinsic RRAM performance. We show that the read-beforewrite, current-limitation and write-termination techniques reduce by -47%, -56% and-13% the power consumption during the writing process, respectively. Combined with write verification and error correction code, the overall improvements are 87% in energy saving and -55% on access time. Based on representative RRAM macro (130nm CMOS), statistic (128kb) and endurance (1M cycles) characterizations, this works contributes to accelerate RRAM industrial adoption by highlighting the design-technology co-optimization contribution.
更多
查看译文
关键词
Non-volatile memory, ECC, smart algorithm, Adaptive and Reconfigurable Systems, Variant-tolerant
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要