Simultaneous densification and improvement of cold spray additively manufactured Ti-6Al-4 V properties via electro-plastic treatment

Large-scale industrial application of additively manufactured (AM) components in general, and specifically cold sprayed additive manufactured (CSAM), is limited due to the nature of this technology and the resulting product’s porosity and embrittlement. To improve the final properties of additively manufactured material, many lengthy, complex, or expensive post-treatments have been proposed. Reducing the environmental impact, cost, and time required for additive manufacturing will allow for greater use in industrial applications. A novel thermomechanical treatment known as in situ electro-plastic treatment (ISEPT) is used in this study to treat CSAM Ti-6Al-4 V alloy known as grade 5 titanium. The Ti-6Al-4 V alloy has approximately three times the strength and hardness of commercial purity titanium (CP-Ti) with lower ductility and a dual-phase (α + β) microstructure that poses challenges during the CSAM process. Compared to CP-Ti, the results showed that CSAM Ti-6Al-4 V presented double the porosity and triple the number of ISEPT passes that presented ~ 2 µm ultra-fine grain microstructure. The ultimate tensile strength (UTS) of the ISEPT material was superior to that of CSAM Ti-6Al-4 V and increased from 184 to 1096 MPa with improved ductility rise from 1.1 up to 8.8%. Six ISEPT passes in air resulted in a slight increase in oxygen from 0.2% in the as-CSAM condition to 0.35%. Tensile properties of the ISEPT material were comparable to wrought Ti-6Al-4 V with 989 MPa UTS and 8.3% elongation. The ISEPT passes consolidated the CSAM (α + β) dual-phase Ti-6Al-4 V and allowed for the nucleation of equiaxed grains at the vicinity of former CSAM splat boundaries. The formation of lamellar colonies within the splat’s inner regions was observed. The role of ISEPT conditions on the rapid elimination of porosity and the evolution of cold spray splat boundaries via dynamic recrystallization were discussed.