Performance assessment of sustainable highly efficient CsSn0.5Ge0.5I3/ FASnI3 based Perovskite Solar Cell: A numerical modelling approach

Lead-free perovskite solar cells (PVSC) are emerging as a very relevant research topic in the modern environment era, where toxicity and stability are the two most significant hurdles for lead-based PVSC design. Existing lead-free perovskites suffer from the same inefficiency problems. The focus of this research is the development and analysis via SCAPS-1D simulator of Pb-free design of CsSn0.5Ge0.5I3/FASnI3 based PVSC. A numerical modelling programming tool is used to examine the influence of many critical parameters on device efficacy. These pa-rameters include the decision of the optimal hole transport layer (HTL), optimal electron transport layer (ETL), doping density, the optimized thickness of both absorber layers, defect density, and interface defect density between numerous films. The highest power conversion efficiency (PCE) of 31.58%, short circuit current density (Jsc) of 29.239 mA/cm2, open-circuit voltage (Voc) of 1.202 V, and fill factor (FF) of 89.55% are all achieved by the optimized device architecture with MoS2 as the HTL and IGZO as the ETL. This demonstrates that high-performance lead-free PVSC can be achieved experimentally by further optimization of the device characteristics.