Performance analysis for 263 nm AlGaN DUV EELD by different EBL techniques

Theoretical calculations with LASTIP software for the electrically driven edge-emitting laser diode (EELD) composed of trinary Aluminum Gallium Nitride (AlGaN) with optimized parameters of Aluminum (Al) composition. Composition thickness is performed in the present work to reduce the threshold current and enhance the output performance. The simulation results for the designed structure lase at a target ultraviolet laser (UVC) wavelength of 263.8 nm. The maximum SE was about 1.43 W/A at an injection current of 763 mA for a conventional EBL with Al0.75Ga0.25, while the lowest threshold current of 725 mA was found for the same conventional structure with Al0.90Ga0.10N. Followed by a slightly higher threshold current of 784 mA when double-side linearly graded EBL techniques were adopted for all different grading levels. Opposing the worst threshold current was found to be 787 mA when simulating inversely tapered EBLs with a relatively lower slope efficiency of about 1.40 W/A for Al0.95-0.85Ga0.05-0.15N EBL. Opposing the worst threshold current was found to be 787 mA when simulating inversely tapered EBLs with a relatively lower slope efficiency of about 1.40 W/A for Al0.95-0.85GaN EBL. This result probably attributes to the sufficient conduction band barrier height for the designed EBL. This will help realize a higher optical output power and a lower threshold current in AlGaN-based ultraviolet EELDs.