Analysis of hybrid-deposited CI(G)Se thin films and theoretical modeling of their properties through SCAPS-1D software

This research work focused on the optimization of CI(G)Se thin films using the hybrid deposition method and the simulation of the CIGSe bilayer thin film solar cell (TFSC) by SCAPS-1D. The chalcopyrite crystal structure with the preferential orientation of (112), the slightly Cu-poor and Se-rich compositions, the compact and larger grains with irregular shapes, and the p-type conductivity of CI(G)Se was observed. From simulative results, the solar cell parameters are slightly affected by varying the material properties of the CISe. The thickness of 5 mu m, the carrier concentration of 1017 cm-3, and the bandgap of 1.4 eV are the optimized conditions for CIGSe. With an increase in the CdS thickness up to 100 nm, the efficiency is slightly increased. At a higher carrier concentration of CdS, the collection of generated charge carriers is enhanced by extending the space charge region towards the absorber layer. There are not found any variation in the solar cell parameters after analyzing the material properties of the ZnO window layer and ZnO:Al transparent conducting oxide. The optimized efficiency of 27.99% is noted after analyzing the material properties of each material used in the CIGSe bilayer TFSC. The experimental results of CI(G)Se and CdS thin films are also simulated in SCAPS-1D software and observed a slightly lower efficiency of 24.63%. This result showed that experimentally optimized parameters can have the potential to achieve more than 20% efficiency. Therefore, a brief analysis of the experimental and theoretical results could be helpful for designing experimental activities in the future.