CsPbBr3 Perovskite Quantum Dots Embedded in Polystyrene-poly2-vinyl Pyridine Copolymer for Robust and Light-Tunable Memristors

The development of a reliable optoelectronic memristor is crucial for the success of neuromorphic vision systems, but current devices are limited by stochastic resistance switching and uncontrollable ion dynamics. To address these challenges, a core-shell nanosphere composite was synthesized using CsPbBr3 quantum dots and block copolymer polystyrene-poly2-vinyl pyridine. This memristor exhibits both negative differential resistance and resistive switching memory behavior and has demonstrated exceptional stability, withstanding over 5000 cycles and remaining stable for over 5 million seconds. It is also tunable by light irradiation, making it ideal for optoelectronic logic operations and multi-derivative state applications. The memory behavior is attributed to an electrochemical metalization mecha-nism involving the formation and annihilation of pyridine groups, conductive metal filaments, and bromide ion vacancies in S2VP filaments. This work presents an effective method for fabricating robust multi-derivative perovskite optoelectronic devices for neuromorphic computing systems. Additionally, machine learning algorithms have demonstrated accurate digital image classification and recognition using photoelectric pulse-driven neuromorphic computation with an accuracy of over 97%.