Design tradeoffs between traditional hexagonal and emerging cubic InXGa(1-X)N/GaN-based green light-emitting diodes

Here, we report on the design tradeoffs between traditional hexagonal and emerging cubic InXGa(1-X)N/GaN-based green (520 nm <= lambda <= 550 nm) light-emitting diodes with special emphasis on the electron blocking layer, number of quantum wells, and thicknesses of quantum wells and barriers. We identified three crucial design rules for cubic green light-emitting diodes: (1) no need for an electron blocking layer; (2) use of a wide quantum well; and (3) choice of thin quantum barriers in multi-quantum well light-emitting diode designs. These design rules increase the internal quantum efficiency of cubic green light-emitting diodes by similar to 30.5% under 100 A/cm(2) injection with respect to traditional designs. Overall, the design rules of cubic light-emitting diodes and their differentiating nature from the traditional, hexagonal ones are crucial for the advent of next-generation cubic light-emitting diodes. (c) 2023 Optica Publishing Group