Aligned Indium Oxide Nanofiber to Achieve High Mobility and High Stability Field-Effect Transistor

Indium oxide (In2O3) is a metal–oxide–semiconductor material with excellent performance. Due to its very large carrier mobility, it is considered a suitable choice for the fabrication of field-effect transistors (FETs). In this report, aligned nanofibers were prepared by electrospinning process, and the performance of In2O3 nanofiber FET was adjusted by controlling the electrospinning time. The results show that the FET based on aligned In2O3 nanofibers exhibits excellent electrical properties at an electrospinning time of 2 min, including the mobility ( $\mu $ FE) of 11.52 cm2/Vs, switching current ratio ( ${I}_{\text {on}}/{I}_{\text {off})}$ of $2.5\times 10^{7}$ , and subthreshold swing (SS) of 0.36 V/dec, and it shows good stability under positive bias stress (PBS). This method of preparing aligned metal–oxide nanofibers by electrospinning to achieve FET with high performance, low power consumption, and high stability is very suitable.