Aluminum doped Zinc oxide anode film for performance enhancement of trilayer fluorescence organic light emitting diode

The industrialization of fluorescence organic light-emitting diodes (OLEDs) has seriously been impacted by high fabrications cost and a short device lifespan. Particularly for transparent conductive anodes (TCA) in an OLED, which benefit manufacturing the simplest configuration with an abundant platform, more flexibility, potentially low cost-effective, and wide-ranging light flux. The goal of this effort has been to look into the possibility of aluminum-doped zinc oxide (AZO) as TCA, typically AZO/SpiroOMeTAD/Alq3: Ir(ppy)3/Bphen/LiF/Al structure is remarkably thought-out by drift–diffusion model. In addition, maximizing the light flux and minimizing the knee voltage necessitates a well-organized trilayer bandgap alignment towards exciton confinement and steadiness charge carrier transport. To enhances the hysteresis of the recombination prefactor through the higher hopping mechanism, the organic layers are staked in between AZO anode and bilayer cathode (LiF/Al) units. Moreover, optimization of the device structure is intended to eliminate the influence on OLED performances under the better thickness adjustment of consecutive layers. The maximum light flux of 1.7095 × 102 Wm−2 has been attained for 70 nm thickness of SpiroOMeTAD as hole conducting layer (HCL), 10 nm thickness of Alq3 as an organic emissive layer (OEL) with Ir(ppy)3 emitter, and 80 nm thickness of Bphen as electron conducting layer (ECL). The exposed different optoelectronic appearance curve signifies the maximum charge carrier density and current density of 1.18 × 1024 m−3, and 1.035 × 106 Am−2 for knee voltages of 2.64 V. The highest recombination prefactor of 1.174 × 10-21 m-6s−1 is achieved at 300 K for different opto-electrical considerations. Hence, future studies may be an alternative strategy for enlightening the efficiency of AZO anode-based OLEDs.