3.3kV All SiC Module for Traction Inverters with 2nd Generation Trench gate SiC MOSFETs

Recently a demand for further weight reduction and higher efficiency of traction inverters is increasing on our market. To achieve those requests, an enhancement of power density of power modules for traction applications is one of the keys to be successful. This paper describes the electrical characteristics of a newly developed 3.3kV All-SiC with the 2nd generation trench gate SiC-MOSFETs in a new high power package (HPnC), which is suitable for traction applications. This All-SiC module achieves more than twice the power density against a silicon version. In addition, Fuji’s 2nd generation trench gate SiC-MOSFETs enables eliminating SiC-SBDs, which allows further enhancement of power density.