A 32Gb/s/pin 0.51 pJ/b Single-Ended Resistor-less Impedance-Matched Transmitter with a T-Coil-Based Edge-Boosting Equalizer in 40nm CMOS.

ISSCC(2023)

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摘要
To cope with the rapidly growing data demand, the DRAM interface bandwidth also increases steeply each year; for graphics applications, the bandwidth per pin has increased to 27Gb/s/pin, thanks to T-coils implemented using RDL layers [1]. As I/O hardware expands, its area and power consumption are also increasing. To alleviate the DRAM interface burden two key ideas are proposed in this paper: (1) a PN-over-NP driver capable of impedance matching, without the use of a resistor, significantly reduces the chip area, and; (2) a T-coil-based edge-boosting equalizer, which does not consume static current when there no sequence transition, that enables impedance matching at high frequencies. In addition, a CMOS clock-edge corrector is introduced to reduce clock skew. As a result, the proposed transmitter achieves 32Gb/s, while maintaining high signal integrity, small area, and low-power consumption.
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关键词
clock skew,CMOS clock-edge corrector,DRAM interface bandwidth,graphics applications,I/O hardware,impedance matching,PN-over-NP driver,power consumption,RDL layers,signal integrity,single-ended resistor-less impedance-matched transmitter,size 40.0 nm,T-coil-based edge-boosting equalizer
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