Giant Nonlinear Optical Response via Coherent Stacking of In-Plane Ferroelectric Layers.

Advanced materials (Deerfield Beach, Fla.)(2023)

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摘要
Thin ferroelectric materials hold great promise for compact nonvolatile memory, nonlinear optical and optoelectronic devices. Herein, we report an ultrathin in-plane ferroelectric material that exhibits a giant nonlinear optical effect: group-IV monochalcogenide SnSe. Nanometer-scale ferroelectric domains with ∼90°/270° twin boundaries or ∼180° domain walls are revealed in physical vapor deposited SnSe by lateral piezoresponse force microscopy. Atomic structure characterization reveals both parallel and antiparallel stacking of neighboring van der Waals (vdW) ferroelectric layers, leading to ferroelectric or antiferroelectric ordering. Ferroelectric domains exhibit giant nonlinear optical activity due to coherent enhancement of second harmonic fields, and the as-resulted second-harmonic generation was observed to be 100 times more intense than monolayer WS . This work demonstrates in-plane ferroelectric ordering and giant nonlinear optical activity in SnSe, which paves the way for applications in on-chip nonlinear optical components and nonvolatile memory devices. This article is protected by copyright. All rights reserved.
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关键词
SnSe,ferroelectric domains,ferroelectric stacking,group- IV monochalcogenides,in-plane ferroelectric material,physical vapor deposition,second harmonic generation
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