Liquid Phase Exfoliated 2-D MoS₂-Based Broadband Heterojunction Low-Powered Photosensor

Researchers are facing a strong reverse thrust toward the exfoliation of 2-D materials at a large scale. These limitations restrict so many intensively needed applications. We have demonstrated chemically exfoliated MoS2 nanosheets-assisted photosensor examined for low-incident optical power (3.78 mu W) and bias voltage -0.5 to +0.5 V.X-ray diffraction (XRD) results show no secondary peaks that neglect the presence of any impurity in the synthesized MoS2. The high-resolution scanning electron microscopy (HR-SEM) shows synthesized flower-like MoS2 nanosheets. Exfoliation of MoS2 nanosheets was carried out in N, N-methyl di-pyridine (NMP), a suitable solvent to develop single to few-layer MoS(2 )nanoflakes. During probe sonication, a low-temperature outer atmosphere arrangement has been ensured by using an ice bath. Sonicated solution has been centrifuged at 12 000 rpm, and the supernatant was collected and drop cast over a p-type (1,0,0) rectangular silicon wafer. Ohmic aluminum (Al) contact has been established. Current and voltage characteristics were performed to study the electrical behavior of fabricated p-Si and synthesized MoS2 heterostructure. The rectification ratio was asymptotic to 5800 achieved at +/- 2 V and the ideality factor was obtained 2.06 in the best-fitted region. The maximum responsivity and detectivity of 14.7 A/W and 2.25 jones were obtained at 300-nm wavelengths corresponding at low bias voltage of -0.5 V.