Low Leakage Current Metal-Insulator-Metal Device Based on a Beryllium Oxide Insulator Created by a Two-Step Spin-Coating Method as a Novel Type of Modified Pechini Synthesis

Beryllium oxide (BeO) is considered to be an attractive alternative material for use in future industries in areas such as semiconductors, spacecraft, aircraft, and rocket technologies due to its high bandgap energy, useful melting point, good thermal conductivity, and dielectric constants. In this context, our approach is a novel method to produce BeO thin films based on a two-step spin-coating innovation of the conventional powder synthesis method. The surface morphology and the crystal structure of BeO thin films were observed to be dependent on the citric acid/beryllium sulfate ratio and the sintering temperature, respectively. To characterize the BeO films, X-ray photoelectron spectroscopy was conducted for an elemental analysis. Furthermore, the bandgap of the BeO thin films was determined by reflection electron energy loss spectroscopy. Finally, the leakage current of a planar metal-insulator-metal device consisting of Au/Ti/BeO thin film/Ti/Au electrodes was determined to be below the nA range over the linear voltage sweeping range of -20 V to +20 V. These results can assist researchers in the areas of morphology control strategies, phase transfer theories, and applications that utilize BeO thin film manufactured by a solution process.