A Physics-Based Dynamic Compact Model of Ferroelectric Tunnel Junctions

Ning Feng,Hao Li,Lining Zhang,Ning Ji, Fangxi Zhang, Xiaobao Zhu, Zongwei Shang,Puyang Cai,Ming Li,Runsheng Wang,Ru Huang

IEEE Electron Device Letters（2023）

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摘要

In this letter, we proposed a dynamic compact model for metal-ferroelectric-semiconductor (MFS) ferroelectric tunnel junctions (FTJ) based on their device physics. The voltage control over dynamic polarizations and the semiconductor surface potentials is achieved for full-region operations, supporting complex FTJ state transitions. A unified and smooth current model across different regions was proposed by formulating tunneling transports in FTJ with complicated barrier shapes from the first-principle tunneling theory. The model was extensively verified with both experimental data and technology computer-aided design (TCAD) simulations, featuring accurate descriptions of multi-states, frequency dependent programming, and circuit simulations.

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关键词

Silicon,Tunneling,Mathematical models,Iron,Integrated circuit modeling,Switches,Semiconductor device modeling,Ferroelectric tunnel junction,compact model,dynamic,self-consistent,minor loop

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